Accession Number:

ADA280109

Title:

InT1Sb for Long-Wavelength Infrared Photodetectors and Arrays

Descriptive Note:

Annual rept.

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

1993-01-01

Pagination or Media Count:

24.0

Abstract:

The heteorepitaxial narrow-gap semiconductors on Si or Ga As substrates offer the possibility of monolithic integration of detectors and readout circuits in the infrared focal plane arrays IRFPAs. This structure can avoid the problems of a complicated etch-thinning process and indium bump displace in the hybrid case. This structure permits the production of a large- area FPAs with high reliability and low cost. The purpose of this project is to develop III-V IRFPA on InSb, GaAs, Si substrates, specially detectors made from In1-xTlxSb material system. The devices are of potential in the long wavelength 8-14 micrometers, particularly in the application of thermal imaging, as MCT materials suffer from poor composition uniform over large areas and thermal stability. As a preliminary step towards INTlSb photovoltaic detectors, it is necessary to establish a reliable procedure to fabricate InSb photovoltaic detectors.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Optical Detection and Detectors
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE