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InT1Sb for Long-Wavelength Infrared Photodetectors and Arrays
NORTHWESTERN UNIV EVANSTON IL DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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A number of samples have been grown in the Intervac-EPI solid-source Molecular Beam Epitaxy MBE system since it was first commissioned in early May, 1994. The samples have consisted of both undoped and doped InSb, undoped InAs and various calibration layers such as n-type and p-type GaAs doping staircases. The different surface reconstructions and surfaces phase transitions have been investigated using Reflection High Energy Electron Diffraction RHEED . For example, InSb growth temperature is set relative to a c4x4 to a1x3 surface phase transition, corresponding to an actual surface temperature of 390 deg C. RHEED oscillations were observed for GaAs, InAs and InSb as this is particularly important for determining growth rates and IIIV flux radio. The philosophy has been to determine system independent growth parameters so that the technology can be easily transferred to other growth systems.
APPROVED FOR PUBLIC RELEASE