Accession Number:

ADA280094

Title:

IR Materials Producibility

Descriptive Note:

Quarterly technical rept. no. 7, 1 Feb-30 Apr 1994

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Report Date:

1994-06-03

Pagination or Media Count:

12.0

Abstract:

The formation energy for mercury vacancy - tellurium antisite pairs is calculated. We developed a method for calculating the ionization energies of the defects in semiconductors. The electron-phonon interaction-induced band-edge shifts in semiconductors are calculated using accurate band structures. The temperature variation of gaps in GaAs done to validate our method and Hg0.78 Cd0.22Te have been calculated and are found to agree well with experiments. Native point defect, Defect density, Photonic material, IRFPA, HgTe, CdTe, ZnSe, HCdTe, LiNbO3.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Optics
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE