Scanning Tunneling Microscopy of Semiconductor Surfaces.
Final rept. 1 Oct 91-30 Sep 93
STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS
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In this final report, we discuss our recent results with the structure of metals on semiconductor surfaces. In particular, we focus our study on the use of surfactants for the epitaxial growth of germanium on silicon. A surfactant, such as tellurium, reduces the interfacial energy between the Si and Ge, as well as their surface free energies to change the growth mode to layer by layer, which is necessary to epitaxial growth. In addition to this summary of technical progress, we summarize some of the important events that took place in the Ginzton Lab during the period covered by this grant. These include the introduction of the force microscope and the transfer of this technology to industrial firms in such a way that instruments based on the designs developed under this grant are now available in commercial form. Finally, we point out that our work on microfabrication of silicon cantilevers can be extended to the construction of parallel arrays where each cantilever is operated independently. Such an array will enable a large increase in speed for the new form of lithography based on patterning silicon with the E-field on the scanning tip. Such patterning can produce lines with widths less than 0.1 micrometer. This range, beyond the limits of optical lithography, is of crucial importance to the future of silicon microcircuits.
- Inorganic Chemistry
- Physical Chemistry
- Electrical and Electronic Equipment