Field-Emitter Arrays for RF Vacuum Microelectronics
Quarterly technical rept no. 10, 1 Jan 31-31 Mar 1994
SRI INTERNATIONAL MENLO PARK CA
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SRI International has completed the tenth quarter of a program to develop field-emitter arrays for vacuum microelectronics. We have met the first- phase program goals of 5 mA total emission, with a current density of 5 Acm2 for at least 2 hours and demonstrated modulation of the emission current at a frequency of 1 GHz. Principal efforts involved the development of a process for forming emitter cones in small diameter apertures and with improved aspect ratios to reduce stress accumulation on film, modification of reactive ion etching chemistry to eliminate sulfur contamination of the cathode, investigation of galvanic etching resulting from a deionized-water rinse, and methods of fabricating emitters arrays with increased geometric field- enhancement factors and higher packaging densities. Variations in emission test results in cathodes at SRI and in cathodes given high-frequency tests at NRL were investigated, and an emission microscope for use in studying emitter array performance, yield, and reliability was assembled. Field-emitter array, Vacuum microelectronics, Low-capacitance cathode.
- Electrical and Electronic Equipment