Accession Number:

ADA279849

Title:

International Symposium on Advanced Laser Technologies Held in Prague, Czech Republic on November 8-13, 1993

Descriptive Note:

Conference papers

Corporate Author:

CZECH ACADEMY OF SCIENCES PRAGUE INST OF PHYSICS

Personal Author(s):

• Boneberg, J.
• Bonch-Bruevich, A. M.
• Mikhailova, G. N.
• Aksenov, Valerii
• Atanasov, P. A.
• Barborica, A.
• Alekhin, A. P.
• Dunovsky, Jiri
• Lagutchev, A. S.
• Maksimov, V. V.

Report Date:

1993-11-13

Pagination or Media Count:

132.0

Abstract:

Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns NdYAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser.

Descriptors:

• *OPTICAL PROPERTIES
• *THIN FILMS
• *LASER APPLICATIONS
• *SEMICONDUCTORS
• DIODES
• YAG LASERS
• TEMPERATURE
• NUCLEATION
• LASER BEAMS
• TRANSMISSIVITY
• MELTING POINT
• GERMANIUM
• REFLECTIVITY
• MELTING
• SILICON
• LIQUID PHASES
• PULSES
• BEAM SPLITTING
• LASERS
• SOLIDIFICATION
• SYMPOSIA
• ANNEALING
• DENSITY
• MEASUREMENT

Subject Categories:

• Electrical and Electronic Equipment
• Lasers and Masers
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE