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Accession Number:
ADA279849
Title:
International Symposium on Advanced Laser Technologies Held in Prague, Czech Republic on November 8-13, 1993
Descriptive Note:
Conference papers
Corporate Author:
CZECH ACADEMY OF SCIENCES PRAGUE INST OF PHYSICS
Report Date:
1993-11-13
Pagination or Media Count:
132.0
Abstract:
Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns NdYAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE