Accession Number:

ADA279820

Title:

Atomically Resolved Structure and Bonding of Delta-Doped Boron Layers on Si(001)

Descriptive Note:

Interim rept. 1 Jun 1993-31 May 1994

Corporate Author:

WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY

Personal Author(s):

• Wang, Y.
• Hamers, R. J.

Report Date:

1994-05-27

Pagination or Media Count:

10.0

Abstract:

Scanning tunneling microscopy has been used to study the formation of delta-doped layers by thermal decomposition of diborane on SiOO1. STM images reveal a number of boron-induced reconstructions which arise from ordered arrangements of three structural subunits. Based on the symmetry of the STM images and the bonding locations of the observed features with respect to the SiOO1 lattice, a structural model is proposed with accounts for the observed STM features. The principal structural subunit is shown to be an ordered arrangement of four boron atoms at substitutional sites in the first bulk-like silicon layer, which is then capped with ordered arrangements of silicon dimers and dimer vacancies.

Descriptors:

• *LAYERS
• *RESOLUTION
• *ATOMS
• *STRUCTURES
• *BORON
• *DOPING
• *BONDING
• SCANNING
• SILICON
• DIBORANES
• DIMERS
• DECOMPOSITION
• TUNNELING
• IMAGES
• SYMMETRY
• MICROSCOPY
• THERMAL PROPERTIES
• SITES
• MODELS

Subject Categories:

• Inorganic Chemistry
• Physical Chemistry
• Optics
• Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE