Accession Number:

ADA279749

Title:

Ion-Molecule Chemistry Related to Plasma Deposition and Etching of Silicon

Descriptive Note:

Final rept. 16 May 1988-16 Dec 1993

Corporate Author:

UTAH UNIV SALT LAKE CITY DEPT OF CHEMISTRY

Personal Author(s):

• Armentrout, Peter B.

Report Date:

1994-02-01

Pagination or Media Count:

20.0

Abstract:

During the 5 years of this contract, we used guided ion beam tandem mass spectrometric methods to study a variety of gas-phase ion-molecule reactions relevant to plasma deposition and etching of silicon. Absolute cross sections over a wide range of kinetic energies for reactions involving both atomic and polyatomic ions were measured. The results yielded energy dependent cross sections, temperature dependent rate constants, and thermochemical data, information vital to further understanding of the chemical mechanisms involved in plasma processing. Ion-molecule reaction rates, Plasma etching, Plasma deposition, Ion-molecule cross sections.

Descriptors:

• *ETCHING
• *CHEMISTRY
• *SILICON
• *PLASMA DEVICES
• *DEPOSITION
• *ION MOLECULE INTERACTIONS
• TEMPERATURE
• REACTION KINETICS
• POLYATOMIC MOLECULES
• CHEMICALS
• THERMOCHEMISTRY
• MASS SPECTROMETRY
• KINETIC ENERGY
• CROSS SECTIONS
• CHEMICAL REACTIONS
• PHASE
• GASES
• MOLECULES
• PROCESSING
• RATES
• ION BEAMS

Subject Categories:

• Physical Chemistry
• Atomic and Molecular Physics and Spectroscopy
• Quantum Theory and Relativity
• Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE