Ion-Molecule Chemistry Related to Plasma Deposition and Etching of Silicon
Final rept. 16 May 1988-16 Dec 1993
UTAH UNIV SALT LAKE CITY DEPT OF CHEMISTRY
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During the 5 years of this contract, we used guided ion beam tandem mass spectrometric methods to study a variety of gas-phase ion-molecule reactions relevant to plasma deposition and etching of silicon. Absolute cross sections over a wide range of kinetic energies for reactions involving both atomic and polyatomic ions were measured. The results yielded energy dependent cross sections, temperature dependent rate constants, and thermochemical data, information vital to further understanding of the chemical mechanisms involved in plasma processing. Ion-molecule reaction rates, Plasma etching, Plasma deposition, Ion-molecule cross sections.
- Physical Chemistry
- Atomic and Molecular Physics and Spectroscopy
- Quantum Theory and Relativity