DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADA279749
Title:
Ion-Molecule Chemistry Related to Plasma Deposition and Etching of Silicon
Descriptive Note:
Final rept. 16 May 1988-16 Dec 1993
Corporate Author:
UTAH UNIV SALT LAKE CITY DEPT OF CHEMISTRY
Report Date:
1994-02-01
Pagination or Media Count:
20.0
Abstract:
During the 5 years of this contract, we used guided ion beam tandem mass spectrometric methods to study a variety of gas-phase ion-molecule reactions relevant to plasma deposition and etching of silicon. Absolute cross sections over a wide range of kinetic energies for reactions involving both atomic and polyatomic ions were measured. The results yielded energy dependent cross sections, temperature dependent rate constants, and thermochemical data, information vital to further understanding of the chemical mechanisms involved in plasma processing. Ion-molecule reaction rates, Plasma etching, Plasma deposition, Ion-molecule cross sections.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE