Accession Number:

ADA279702

Title:

Aerosol-Assisted Chemical Vapor Deposition of Copper: A Liquid Delivery Approach to Metal Thin Films

Descriptive Note:

Technical rept.

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE

Personal Author(s):

• Corbitt, Thomas S.
• Hampden-Smith, Mark J.
• Kodas, T. T.
• Roger, C.

Report Date:

1994-05-06

Pagination or Media Count:

14.0

Abstract:

Aerosol-Assisted Chemical Vapor Deposition AACVD has been used to attain high deposition rates 1000 Amin, up to 800 Amin at 140 deg C of Cu films at low temperatures 120-200 deg C from toluene solutions of hfacCu1, 5-COD in a warm-wall reactor. The films are crystalline and exhibit resistivities close to bulk 1.7-3.5 micro omega cm. Activation energies calculated from the deposition rate as a function of the preheating temperature and the substrate temperature varying also the nozzle-substrate distance were 6.8, 8.9 0.7 cm and 9.1 1.7 cm kcalmol, respectively

Descriptors:

• *METALS
• *AEROSOLS
• *THIN FILMS
• *COPPER
• *CHEMICAL VAPOR DEPOSITION
• *LIQUIDS
• FUNCTIONS
• WALLS
• ACTIVATION ENERGY
• TOLUENES
• REACTOR OPERATION
• NOZZLES
• TEMPERATURE
• RATES
• MICROELECTRONICS
• SUBSTRATES
• SILICON DIOXIDE

Subject Categories:

• Inorganic Chemistry
• Physical Chemistry
• Metallurgy and Metallography
• Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE