Accession Number:

ADA279702

Title:

Aerosol-Assisted Chemical Vapor Deposition of Copper: A Liquid Delivery Approach to Metal Thin Films

Descriptive Note:

Technical rept.

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE

Report Date:

1994-05-06

Pagination or Media Count:

14.0

Abstract:

Aerosol-Assisted Chemical Vapor Deposition AACVD has been used to attain high deposition rates 1000 Amin, up to 800 Amin at 140 deg C of Cu films at low temperatures 120-200 deg C from toluene solutions of hfacCu1, 5-COD in a warm-wall reactor. The films are crystalline and exhibit resistivities close to bulk 1.7-3.5 micro omega cm. Activation energies calculated from the deposition rate as a function of the preheating temperature and the substrate temperature varying also the nozzle-substrate distance were 6.8, 8.9 0.7 cm and 9.1 1.7 cm kcalmol, respectively

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Metallurgy and Metallography
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE