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Accession Number:
ADA279702
Title:
Aerosol-Assisted Chemical Vapor Deposition of Copper: A Liquid Delivery Approach to Metal Thin Films
Descriptive Note:
Technical rept.
Corporate Author:
NEW MEXICO UNIV ALBUQUERQUE
Report Date:
1994-05-06
Pagination or Media Count:
14.0
Abstract:
Aerosol-Assisted Chemical Vapor Deposition AACVD has been used to attain high deposition rates 1000 Amin, up to 800 Amin at 140 deg C of Cu films at low temperatures 120-200 deg C from toluene solutions of hfacCu1, 5-COD in a warm-wall reactor. The films are crystalline and exhibit resistivities close to bulk 1.7-3.5 micro omega cm. Activation energies calculated from the deposition rate as a function of the preheating temperature and the substrate temperature varying also the nozzle-substrate distance were 6.8, 8.9 0.7 cm and 9.1 1.7 cm kcalmol, respectively
Distribution Statement:
APPROVED FOR PUBLIC RELEASE