Accession Number:

ADA279686

Title:

MOCVD Grown Si-Doped n+ InP Layers for the Subcollector Region in HBTs

Descriptive Note:

Professional paper

Corporate Author:

NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA

Personal Author(s):

Report Date:

1994-01-01

Pagination or Media Count:

7.0

Abstract:

This paper describes MOCVD Grown Si-Doped nInP Layers for the Subcollector Region in HBTs. Subcollector layers in emitter-up HBTs are used to make ohmic contact to the collector region grown immediately above it. Ideally, the n subcollector layer should have low electrical resistivity, good morphology and an abrupt highlow doping transition between it and the adjacent undoped collector region. Carrier concentrations in excess of 1x10exp 19cu cm are desirable for low resistance contacts to the subcollector layers. Doping above 1x10exp 19cu cm is reported for Sn 1,2,S,Se and Te dopants3,4, but memory effects i.e., continuing of the dopant incorporation into subsequently grown undoped layers limit their usefulness. Si-doping of InP shows no memory problem 3,4, however maximum carrier concentrations seem to be limited to 1x10exp 19cu cm similar to Si-doped GaAs 5, above which degraded morphology occurs. Prospects for higher Si dopant saturation levels are seen from a few citations of carrier concentrations up to approx. 2x10exp 19cu cm 6,7 and some of these results suggest that lower growth temperature may be the key to achieving higher Si-doping. Electronic devices, Ion beam technology, VLSIVH

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE