Accession Number:

ADA279445

Title:

Application of Optical Second Harmonic Generation to Surface Analysis

Descriptive Note:

Technical rept. Jun 1993-May 1994

Corporate Author:

OREGON UNIV EUGENE DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1994-05-13

Pagination or Media Count:

6.0

Abstract:

Understanding surface and interfacial properties remains a challenging task, particularly when these interfacial regions are under relatively reactive conditions. This is particularly true of semiconductor surfaces which can be highly reactive under ambient or processing conditions. One of the studies to be described in this presentation is our recent work on Si electrode surfaces. In recent years significant progress has been made in characterizing the Sielectrolyte interface by infrared reflectance, ultra-high vacuum UHV transfer experiments, and scanning tunneling microscopy STM and AFM imaging. These studies have taken advantage of the relative stability of Si surface prepared in a hydrogen terminated state. The more usual form in either air or in water is a heavily oxidized Si surface for which much less is known because of the inapplicability of many of the above techniques to examining the SiSiO2 interfacial region. The presence of the oxide can significantly alter the electrochemistry and the electronic properties of the semiconductor. In this paper we discuss our application of optical second harmonic generation SHG to studying the Sielectrolyte and SiSiO2electrolyte interfaces for which oxides have been photoanalytically grown on the surface. Sielectrolyte, Semiconductors, SHG.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE