Accession Number:

ADA279408

Title:

Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures

Descriptive Note:

Technical rept.,

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA TECHNOLOGY OPERATIONS

Personal Author(s):

• Halle, Linda F.
• Moss, Steven C.
• Marvin, Dean C.

Report Date:

1993-08-15

Pagination or Media Count:

12.0

Abstract:

We report a set of transient photoluminescence TPL measurements of GaAs and AlGaAs double heterostructure DH materials as a function of temperature from 10K to 300K. We also report measurements of the time-integrated photoluminescence spectra of these samples. We observe, in both the spectra and the TPL measurements, evidence that the low-temperature photoluminescence kinetics are affected by additional paths for radiative decay that are not evident at room temperature, but have implications for material qualities measured at room temperature. Transient photoluminescence, GaAs, AlGaAs, Solar cells.

Descriptors:

• *TRANSIENTS
• *MEASUREMENT
• *GALLIUM ARSENIDES
• *PHOTOLUMINESCENCE
• *SOLAR CELLS
• *ALUMINUM GALLIUM ARSENIDES
• FUNCTIONS
• LASERS
• TIME
• DECAY
• KINETICS
• SPECTRA
• ROOM TEMPERATURE
• PATHS
• TEMPERATURE
• LOW TEMPERATURE
• MATERIALS
• COMPOSITE MATERIALS

Subject Categories:

• Inorganic Chemistry
• Electrical and Electronic Equipment
• Electric Power Production and Distribution
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE