Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures
AEROSPACE CORP EL SEGUNDO CA TECHNOLOGY OPERATIONS
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We report a set of transient photoluminescence TPL measurements of GaAs and AlGaAs double heterostructure DH materials as a function of temperature from 10K to 300K. We also report measurements of the time-integrated photoluminescence spectra of these samples. We observe, in both the spectra and the TPL measurements, evidence that the low-temperature photoluminescence kinetics are affected by additional paths for radiative decay that are not evident at room temperature, but have implications for material qualities measured at room temperature. Transient photoluminescence, GaAs, AlGaAs, Solar cells.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Electric Power Production and Distribution