Accession Number:

ADA279375

Title:

Sub-Millimeterwave Semiconductor Signal Sources

Descriptive Note:

Final rept. Aug 1990-Aug 1993

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

• Rosenbaum, S. E.

Report Date:

1994-04-01

Pagination or Media Count:

31.0

Abstract:

Research on Indium Phosphide Pseudomorphic High Electron Mobility Transistors InP PHEMTs resulted in 155 GHz and 215 GHz monolithic integrated circuit oscillators. These circuits represent the highest frequencies achieved to date for a fundamental signal source using a three terminal device. Advances in epitaxial growth of the pseudomorphic semiconductor structures and the achievement of low-resistance, 50-nm-long self-aligned gates resulted in the highest short circuit current gain cutoff frequency ft transistors ever reported. The planar quasi-optical slot oscillators verify the high frequency capabilities of the InP PHEMT. Hughes Laboratories performed the research on materials, device design and processing device characterization and modeling. The University of Michigan designed the oscillator circuits, including the integrated planar antennas, and measured the .oscillator performance. Submillimeterwave, Monolithic integrated circuit, High electron mobility transistor, Oscillator, Indium phosphide

Descriptors:

• *OSCILLATORS
• *INTEGRATED CIRCUITS
• *MILLIMETER WAVES
• *SEMICONDUCTORS
• *SIGNALS
• *INDIUM PHOSPHIDES
• OPTICS
• HIGH FREQUENCY
• GAIN
• SLOTS
• TERMINALS
• ELECTRON MOBILITY
• MONOLITHIC STRUCTURES(ELECTRONICS)
• SHORT CIRCUITS
• ANTENNAS
• MOBILITY
• MATERIALS
• RESISTANCE
• STRUCTURES
• GATES(CIRCUITS)
• EPITAXIAL GROWTH

Subject Categories:

• Inorganic Chemistry
• Electrical and Electronic Equipment
• Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE