Accession Number:

ADA279203

Title:

MBE Growth, Characterization and Electronic Device Processing of Hg- Based Semiconductor Alloys and Heterostructures

Descriptive Note:

Final rept.

Corporate Author:

ILLINOIS UNIV AT CHICAGO CIRCLE DEPT OF PHYSICS

Personal Author(s):

Report Date:

1993-12-16

Pagination or Media Count:

52.0

Abstract:

The main objective of this contract was to improve the crystal quality of CdTe111B grown directly on silicon 100 substrate. At the starting date of this contract Sept 1990 the best CdTe111B grown on Si100 had double crystal x-ray rocking curves DCRC FWHM of 460 arcsec. These layers were exhibiting double domains and wer plagued by microtwins. At the end of this contact we are routinely growing single-domain twin-free CdTe111B epilayers on Si100. The best DCRC FWHM are of 100 arcsec which is equivalent of better to th at of CdTe grown on Si with a buffer layer such as GaAs or Ca,BaF2. The drastic improvement is due to a systematic investigation of the Si substrate tilt, an understanding of the driving forces for double-domain and microtwin suppression along with a precise control of the growth parameters.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE