Accession Number:

ADA279202

Title:

Industrial Exploitation of a Alternate Technology for the Production of HgCdTe Epilayers, Structures and Devices

Descriptive Note:

Final rept.

Corporate Author:

EPIR LTD OAKBROOK IL

Personal Author(s):

• Faurie, Jean-Pierre

Report Date:

1994-02-14

Pagination or Media Count:

71.0

Abstract:

The program goals was Estimate the total cost to produce an MBE- grown HgCdTe epitaxial wafer suitable for the industrial manufacture of an IR photo diode detector array. Establish manufacturing procedure for MBE-grown HgCdTe epitaxial layers in order to bring to the market a product which is suitable for FPAs. Growth of high quality HgCdTe single epilayers and heterostructures with extremely uniform physical properties. The following characteristics, according to the program goals, were expected to be reached at the end of this program.

Descriptors:

• *STRUCTURES
• *MERCURY CADMIUM TELLURIDES
• DIODES
• DETECTORS
• MANUFACTURING
• ARRAYS
• SUBSTRATES
• MOLECULAR BEAMS
• COSTS
• PHOTODIODES
• INFRARED EQUIPMENT
• WAFERS
• ESTIMATES
• ELECTRICAL PROPERTIES
• EPITAXIAL GROWTH
• LAYERS
• PHYSICAL PROPERTIES
• COMPOSITE MATERIALS

Subject Categories:

• Electrical and Electronic Equipment
• Laminates and Composite Materials
• Crystallography
• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE