Chemical Reactions of Chlorine on a Vicinal Si(100) Surface Studied by ESDIAD
PITTSBURGH UNIV PA SURFACE SCIENCE CENTER
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The reaction of Cl2 on a vicinal Si100 surface has been studied by ESDIAD. This type of surface possesses two types of sites pairs of dangling bonds on Si-Si terrace dimers, and single dangling bonds on the 2-atom layer high steps. The reactivity of these two sites is compared. For low coverages the step dangling bonds are identified as the preferred Cl bonding site after 673K- annealing. Upon higher temperature annealing and SiCl2g desorption, the terrace-site Cl species are depleted more rapidly than the step-site Cl species. Extensive isothermal etching under a continuous Cl2 flux at 800K is found to produce a disordered surface structure. Heating to 1123K causes a reordering of the surface.
- Inorganic Chemistry
- Physical Chemistry
- Manufacturing and Industrial Engineering and Control of Production Systems