Accession Number:

ADA279059

Title:

Chemical Reactions of Chlorine on a Vicinal Si(100) Surface Studied by ESDIAD

Descriptive Note:

Technical rept.

Corporate Author:

PITTSBURGH UNIV PA SURFACE SCIENCE CENTER

Personal Author(s):

• Dohnalek, Z.
• Gao, Q.
• Choyke, W. J.
• Yates, J. T., Jr

Report Date:

1994-03-24

Pagination or Media Count:

27.0

Abstract:

The reaction of Cl2 on a vicinal Si100 surface has been studied by ESDIAD. This type of surface possesses two types of sites pairs of dangling bonds on Si-Si terrace dimers, and single dangling bonds on the 2-atom layer high steps. The reactivity of these two sites is compared. For low coverages the step dangling bonds are identified as the preferred Cl bonding site after 673K- annealing. Upon higher temperature annealing and SiCl2g desorption, the terrace-site Cl species are depleted more rapidly than the step-site Cl species. Extensive isothermal etching under a continuous Cl2 flux at 800K is found to produce a disordered surface structure. Heating to 1123K causes a reordering of the surface.

Descriptors:

• *ETCHING
• *SILICON
• *CHEMICAL REACTIONS
• *HALOGENS
• *CHLORINE
• IONS
• TEMPERATURE
• ANNEALING
• SPECTROSCOPY
• LAYERS
• SURFACES
• DIMERS
• DESORPTION
• BONDING
• HEATING
• ELECTRONS
• CHEMICAL BONDS
• SITES
• STRUCTURES
• REACTIVITIES
• CRYSTALS
• ATOMS

Subject Categories:

• Inorganic Chemistry
• Physical Chemistry
• Manufacturing and Industrial Engineering and Control of Production Systems
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE