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Accession Number:
ADA278419
Title:
Critical Review and Technology Assessments, '91-'92
Descriptive Note:
Corporate Author:
RELIABILITY ANALYSIS CENTER GRIFFISS AFB NY
Report Date:
1991-09-01
Pagination or Media Count:
452.0
Abstract:
The increased complexity and speed requirements of computers, communications, military and aerospace systems has increased the need for devices with performance levels that cannot be attained or we difficult to achieve with silicon designs. This has cause component vendors to seek other materials such as Gallium Arsenide GaAs for device construction. GaAs is a compound semiconductor material which exhibits superior carrier mobility, radiation hardness and power efficiency in high frequency application up to 1 00 GHz. The Department of Deforms DoD has provided research funds toward the development of GaAs technology since the benefits of faster components and the inherent radiation hardness of GaAs is appealing to military applications. This technology review covers design and application issues for GaAs devices including Monolithic Microwave Integrated Circuit MMICs, field effect transistors, millimeter wave diodes, and photonic components. Highlighted is a review of models which have bee proposed to predict the reliability of gallium arsenide components. Gallium ArsenideGaAs, Monolithic Microwave Integrated CircuitsMMIC, Reliability, Reliability prediction, Product evaluation, QML
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
