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Electrical Characteristics of GaAs MESFET Fabrication by Ion Implantation of Si or Se
Final rept. 5 Jul 1989-4 Oct 1993
STANFORD UNIV CA DEPT OF ELECTRICAL ENGINEERING
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Since its synthesis in the 1920s by Goldschmidt, Gallium Arsenide has received much attention in the last few decades. In the mid-1980s, GaAs technology finally matured into the age of production. We saw a boom of companies dedicated to the growth of GaAs materials and the fabrication of GaAs devices and integrated circuits. Although GaAs is no longer being considered a general purpose material like silicon, it is now well established in several niche markets, such as Direct Broadcast Satellite, Microwave Monolithic Integrated Circuits and Optoelectronics.
APPROVED FOR PUBLIC RELEASE