Accession Number:

ADA278416

Title:

Electrical Characteristics of GaAs MESFET Fabrication by Ion Implantation of Si or Se

Descriptive Note:

Final rept. 5 Jul 1989-4 Oct 1993

Corporate Author:

STANFORD UNIV CA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Sigmon, T. W.

Report Date:

1993-10-04

Pagination or Media Count:

102.0

Abstract:

Since its synthesis in the 1920s by Goldschmidt, Gallium Arsenide has received much attention in the last few decades. In the mid-1980s, GaAs technology finally matured into the age of production. We saw a boom of companies dedicated to the growth of GaAs materials and the fabrication of GaAs devices and integrated circuits. Although GaAs is no longer being considered a general purpose material like silicon, it is now well established in several niche markets, such as Direct Broadcast Satellite, Microwave Monolithic Integrated Circuits and Optoelectronics.

Descriptors:

• *METALS
• *GALLIUM ARSENIDES
• *FIELD EFFECT TRANSISTORS
• *SEMICONDUCTORS
• *ION IMPLANTATION
• *SILICON
• *ELECTRICAL PROPERTIES
• *SELENIUM
• FABRICATION
• CRYSTAL GROWTH
• SOLID STATE ELECTRONICS
• DEFECT ANALYSIS
• POISSON EQUATION
• EPITAXIAL GROWTH

Subject Categories:

• Inorganic Chemistry
• Electrical and Electronic Equipment
• Electricity and Magnetism
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE