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Material Engineering of the Novel Semiconductor Structures
Final rept. 15 Feb 1991-14 Feb 1994
JOHNS HOPKINS UNIV BALTIMORE MD DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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Using photoluminescence PL excitation spectroscopy we measured trapping times and recombination times in stepped QWs and coupled QWs and related the results to the wavefunctioninterface overlaps. Continuous wave PL excitation spectra of multiple narrow-stepped QWs at room temperature have been measured for the first time. It has been observed that PL intensity increases stronger than as a square of the excitation intensity, and we have attributed this phenomenon to the intricate blend of the radiative recombination between free carriers with the nonradiative recombination on the saturable interface traps. Using the CW PL data only we have managed to measure both the trapping efficiency and ratio between electron and hole radiative and nonradiative decay times. The result of this research were published in the two separate articles in the Applied Physics Letters 2,4,8 and presented at international conferences 11-13.
APPROVED FOR PUBLIC RELEASE