Accession Number:

ADA278380

Title:

Dynamics of Supermatrix Semiconductor Growth

Descriptive Note:

Final rept. 25 Sep 1990-24 Dec 1993

Corporate Author:

ELECTRONIC MATERIALS ENGINEERING CAMARILLO CA

Personal Author(s):

• Holmes, Douglas E.
• Koo, Linda

Report Date:

1993-12-24

Pagination or Media Count:

34.0

Abstract:

Electronic Materials Engineering and AFOSR have demonstrated a new semiconductor materials technology for electronic and optoelectronic device applications the Supermatrix Semiconductor SMS. SMS makes possible the 3-dimensional superlattice and a new method for engineering the properties of semiconductor materials through the synergy of 3-dimensional microstructural ordering. A CrGaAs SMS has been produced in Ingot form 2 in. long and 1 in. diameter exhibiting a periodic rod-matrix microstructure over wafer-scale distances. Electronic, optical, and structural properties were characterized by PPL, SIMS, RBS, Auger, and x-ray diffraction and correlated to conditions of solidification. It was demonstrated that the cubic degeneracy of GaAs In the CrGaAs matrix is lifted as a result of anisotropic stress and leads to birefringence. Advances in practical processing of SMS materials, Including polishing, have also been achieved to support future device development activities. Supermatrix semiconductor.

Descriptors:

• *MATRIX MATERIALS
• *SEMICONDUCTORS
• STRESSES
• ELECTRONICS
• DIAMETERS
• OPTICAL PROPERTIES
• MICROSTRUCTURE
• DYNAMICS
• STRUCTURAL PROPERTIES
• SOLIDIFICATION
• RODS
• CHROMIUM
• BIREFRINGENCE
• ANISOTROPY
• SCALE
• DIFFRACTION
• ENGINEERING
• THREE DIMENSIONAL
• X RAYS
• POLISHING
• AUGERS
• WAFERS
• MATERIALS
• PROCESSING
• GROWTH(GENERAL)
• GALLIUM ARSENIDES
• PHOTOLUMINESCENCE
• SUPERLATTICES
• X RAY DIFFRACTION

Subject Categories:

• Electrical and Electronic Equipment
• Electrooptical and Optoelectronic Devices
• Laminates and Composite Materials
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE