Accession Number:

ADA277921

Title:

Temperature Dependence of Single-Event Burnout in N-Channel Power MOSFET's

Descriptive Note:

Technical rept.

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA TECHNOLOGY OPERATIONS

Report Date:

1994-03-15

Pagination or Media Count:

13.0

Abstract:

The temperature dependence of single-event burnout SEB in n-channel power metal-oxide-semiconductor field effect transistors MOSFETs is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends. SEU, DMOS, HEXFET, Single-Event- Burnout SEB, N-Channel MOSFET, Temperature dependence.

Subject Categories:

  • Electrical and Electronic Equipment
  • Thermodynamics
  • Combustion and Ignition

Distribution Statement:

APPROVED FOR PUBLIC RELEASE