Temperature Dependence of Single-Event Burnout in N-Channel Power MOSFET's
AEROSPACE CORP EL SEGUNDO CA TECHNOLOGY OPERATIONS
Pagination or Media Count:
The temperature dependence of single-event burnout SEB in n-channel power metal-oxide-semiconductor field effect transistors MOSFETs is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends. SEU, DMOS, HEXFET, Single-Event- Burnout SEB, N-Channel MOSFET, Temperature dependence.
- Electrical and Electronic Equipment
- Combustion and Ignition