Accession Number:

ADA277900

Title:

Infrared Detectors Based on Si/SiGe Superlattices and Silicide/SiGe Schottky Barriers Operating beyond 12um

Descriptive Note:

Final rept. 1 Jul-31 Dec 1993

Corporate Author:

PD-LD INC PRINCETON NJ

Personal Author(s):

Report Date:

1994-02-15

Pagination or Media Count:

24.0

Abstract:

Work performed in Phase I of this project clearly established the feasibility of using SiGe detectors in the LWIR region. The most important achievements are Both, Schottky barrier and multiquantum well structures based on SiGe alloys and capable of detection in the LWIR region have been grown by the RTCVD epitaxial growth method For the first time, the selective epitaxial growth of LWIR SiGe detectors on silicon substrates with CMOS circuitry has been demonstrated, thus showing that monolithically integrated detector-multiplexer structures are feasible Schottky barrier detectors with cut-off wavelengths exceeding 10 micrometers have been demonstrated Extensive spectral response, cut-off wavelength and dark current measurements for Schottky barrier detectors based on Pt silicide SiGe alloys with Ge content ranging from 0 to 20 have been carried out and discussed. Infrared detectors, SiGe alloys, Schottky barrier detectors, Multiquantum wells.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE