Accession Number:

ADA277733

Title:

Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Report Date:

1994-03-01

Pagination or Media Count:

13.0

Abstract:

We have demonstrated threshold current densities below 800 Asq cm in large-diameter 75 micrometers d 150 micrometers vertical-cavity surface- emitting lasers fabricated from an epitaxial structure containing a single In0. 2Ga0.8As quantum well in a one-wavelength-long Fabry-Perot resonant cavity. The fabrication process uses a circular AuCrAu disk as both the p-type contact and the mask for chemically etching individual diodes.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE