Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process
ARMY RESEARCH LAB ADELPHI MD
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We have demonstrated threshold current densities below 800 Asq cm in large-diameter 75 micrometers d 150 micrometers vertical-cavity surface- emitting lasers fabricated from an epitaxial structure containing a single In0. 2Ga0.8As quantum well in a one-wavelength-long Fabry-Perot resonant cavity. The fabrication process uses a circular AuCrAu disk as both the p-type contact and the mask for chemically etching individual diodes.
- Physical Chemistry
- Electrical and Electronic Equipment
- Lasers and Masers
- Electricity and Magnetism