Accession Number:

ADA277554

Title:

Electron-Bombarded Semiconductor Amplifier for High-Power, High- Frequency Output

Descriptive Note:

Professional paper

Corporate Author:

NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA

Personal Author(s):

Report Date:

1993-10-01

Pagination or Media Count:

7.0

Abstract:

This paper describes a high-powered radio-frequency amplifier being developed for communications jamming and other applications in the HF band. It is intended to put out 10- 100 kW over the 2-30 MHz band without tuning or filters. Its principle of operation is based on the current flowing through reverse-biased diodes due to the creation of electron-hole pairs by high-energy electrons passing through the junction regions. A set of 100 - 1000 diodes are combined in an array to make an amplifier with 10 - 100 kW of output power. This amplifier has the advantages of high power, small size, high gain, and high linearity. Communications Countermeasures.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radio Countermeasures
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE