Electron-Bombarded Semiconductor Amplifier for High-Power, High- Frequency Output
NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA
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This paper describes a high-powered radio-frequency amplifier being developed for communications jamming and other applications in the HF band. It is intended to put out 10- 100 kW over the 2-30 MHz band without tuning or filters. Its principle of operation is based on the current flowing through reverse-biased diodes due to the creation of electron-hole pairs by high-energy electrons passing through the junction regions. A set of 100 - 1000 diodes are combined in an array to make an amplifier with 10 - 100 kW of output power. This amplifier has the advantages of high power, small size, high gain, and high linearity. Communications Countermeasures.
- Electrical and Electronic Equipment
- Radio Countermeasures
- Radiofrequency Wave Propagation