Accession Number:

ADA277536

Title:

Quarterly Technical Report, Agreement Number N00014-92-J-1308 (Lehigh University)

Descriptive Note:

Corporate Author:

LEHIGH UNIV BETHLEHEM PA

Report Date:

1992-01-01

Pagination or Media Count:

3.0

Abstract:

Preliminary kinetics studies of SiGe oxide growth were conducted on spare samples with and without boron doping. Reasonable oxides were grown for 100 ppm additions of NF3 to the dry O2 ambient, as measured by ellipsometry. The doctoral student on this project picked his doctoral committee, which includes Dr. Phillip E. Thompson from the Naval Research Laboratory. His proposal, entitled The Low Temperature Oxidation Behavior of SiGe Thin Films in a Fluorinated Ambient has been approved. Dr. Thompson has provide an initial set of Si-Ge-covered wafers with 2,5,10 and 20 percent Ge, prepared by MBE. Additional samples have been ordered from AT and T Bell Laboratories. Our work on this contract has been concerned with the use of implanted germanium to reduce hot electron injection from silicon into SiO2 in MOSFET Devices.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE