Investigation of Dose Rate Dependent Electrical Activation of Implanted Dopants in Gallium Arsenide
Final techical rept.
WHITMAN COLL WALLA WALLA WA DEPT OF PHYSICS
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In references 1 and 2 the principal investigator and his collaborators have documented that a surprisingly large improvement in the electrical properties of silicon and sulfur implanted GaAs are realized if the implantations are carried out at low dose-rates. This work is the subject of a Navy Patent application case 72,812. It seems likely that these phenomena are related to a dose-rate dependent damage accumulation mechanism in GaAs that has recently been reported on by a group at Oak Ridge National Laboratories. While the dose-rate effects can now be expected there is no understanding as to exactly why they occur nor can they be accurately predicted. This study seeks to shed light on these issues by performing spectroscopic measurements on silicon implanted GaAs samples and correlating these results with the implantation parameters and electrical properties of the samples.
- Inorganic Chemistry
- Electricity and Magnetism