SI/SIO2 Interface Studies by Spectroscopic Immersion Ellipsometry and Atomic Force Microscopy
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
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The dependence of the SiSio2 interface characteristics on the thickness and oxidation temperature for Sio2 films grown on different Si orientations was studied by spectroscopic immersion ellipsometry SIE and atomic force microscopy AFM. Essentially, SIE uses liquids that-match to the refractive index of the films, thereby optically removing the films and consequently increasing the sensitivity to the interface. We show that as the thickness of the thermally grown SiO2 overlayer increases, the thickness of the suboxide layer at the interface also increases, and the average radius of the crystalline silicon protrusions roughness at the interface decreases for the three different Si orientations 100, 110 and 111, and two different oxidation temperatures 800 deg C and 1000 deg C studied. The dependence of the interface roughness on the thickness of the SiO2 overlayer was confirmed by AFM. The results include unintentionally and intentionally roughened Si samples and are shown to be consistent with the commonly accepted Si oxidation model. Thickness, Oxidation, Atomic, Immersion.
- Inorganic Chemistry
- Physical Chemistry
- Atomic and Molecular Physics and Spectroscopy