Accession Number:

ADA277293

Title:

Radiation Tolerant, High Speed, Low Power, Gallium Arsenide Logic

Descriptive Note:

Master's thesis

Corporate Author:

NAVAL POSTGRADUATE SCHOOL MONTEREY CA

Personal Author(s):

Report Date:

1993-12-01

Pagination or Media Count:

116.0

Abstract:

Gallium Arsenide GaAs circuits are largely immune to slowly accumulated radiation doses and therefore do not need the shielding required by complementary metal oxide semiconductor CMOS devices. This attribute renders GaAs circuits particularly attractive for space craft and military applications. However, it has been shown that GaAs circuits with short gate length transistors are excessively susceptible to single event upsets SEU due to enhanced charge collection at the edges of the gate called edge effect. This thesis studies the SEU problem in two parts. Extensive computer modeling and simulation of a charged particle passing through various transistors of a low power, two-phase dynamic MESFET logic IDFL test chip was conducted using HSPICE in the first part. In the second part, new GaAs logic topologies are developed, simulated, and layed out in integrated circuits which require less power than directly coupled MESFET logic DCFL and should be less susceptible to single event upsets than TDFL circuits. Single event upset, Gallium arsenide logic.

Subject Categories:

  • Radiation and Nuclear Chemistry
  • Electrical and Electronic Equipment
  • Computer Hardware
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE