Accession Number:

ADA277287

Title:

High Speed, Strained Layer, Multiquantum Well, GaInAsP and GaAs Lasers and Heterostructures

Descriptive Note:

Final rept.

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA

Report Date:

1993-12-01

Pagination or Media Count:

63.0

Abstract:

This report is divided into three Sections the first covering the work done in the area of high speed InGaAsGaAs strained quantum well lasers the second in the material growth and laser fabrication in the InGaAsAlInGaAs system and the third in the Gas Source Molecular Beam Epitaxy GSMBE of In materials. This contract began at a time when quantum well laser bandwidths were severely limited for unknown reasons and the largest bandwidths were in bulk lasers. This has all changed now. Strained quantum well lasers were fabricated during the initial phase of this program resulting in anomalously large damping rates in quantum well lasers. Large damping rates result in small bandwidth because the lasers become critically damped at a low frequency. During the second portion of the contract, a theory describing the reasons for the resonance frequency, damping frequency, K factor, intensity noise, internal efficiency injection efficiency and wavelength chirping has been derived. Theoretical and experimental evidence in this program shows that carrier transport can lead to significant low frequency parasitic-like, rolloff that reduces the modulation response by as much as a factor of six in quantum well lasers. Semiconductor laser, Heterostructures, Quantum wells, Strained.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE