Accession Number:

ADA277188

Title:

Novel Growth Technologies for In Situ Formation of Semiconductor Quantum Wire Structures

Descriptive Note:

Final rept.

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA COLL OF ENGINEERING

Personal Author(s):

Report Date:

1994-01-01

Pagination or Media Count:

12.0

Abstract:

Novel growth technologies were developed for low dimensional quantum materials and devices. Non-hydride MOCVD and use of strain to produce InP quantum dots have been achieved. This ONR contract was key to our development of the less hazardous novel non-hydride sources, tertiarybutylarsine TBA and tertiarybutylphosphine TBP for the growth on InP based electronic devices. Indium Phosphide channel JFET were fabricated by Mocvd using tertiarybutylphosphine TBP as the alternative source for phosphine for the first time. We have developed the Stranski-Krastanow SK growth mode for the in-situ formation of InP quantum dots. It has been observed that many strained systems exhibit Stranski-Krastanow growth, where the epitaxy initiates in two dimensions but transforms to three dimensions with the formation of dislocations in response to the energetics and kinetics of the layer.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Laminates and Composite Materials
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE