Accession Number:

ADA277178

Title:

Heteroepitaxial Diamond Growth

Descriptive Note:

Final rept. 1 Jan-31 Dec 93,

Corporate Author:

RESEARCH TRIANGLE INST (RTI) INST RESEARCH TRIANGLE PARK NC

Report Date:

1994-02-01

Pagination or Media Count:

104.0

Abstract:

Technical highlights from 1993 include the following Growth Chemistries. A clear correlation was observed between ionization potential of feedstock gasses and critical power necessary for inductive coupling of the plasma and consequent diamond growth. Substrate preparation and epitaxial film quality. Ion-implantation of C and O has been coupled with either electrochemical etching or acid cleaning for surface preparation prior to homoepitaxial growth. Reactor modifications. Key improvements were made to the rf reactor to allow for long growths to consolidate substrates. Liquid mass flow controllers were added to precisely meter both the water and selected alcohol. Ion-implantation and lift off. Lift off of diamond platelets has been achieved with two processes. Ion-implantation of either C or O followed by annealing and implantation of either C or O followed by water based electrolysis. Diamond characterization. Development of novel detect characterization techniques. 1 Etch delineation of defects by exposure to propane torch flame. 2 Hydrogen plasma exposure to enhance secondary electron emission and provide non- topographical defect contrast. Acetylene will react at room temperature with sites created by partial desorption of oxygen from the 100 diamond surface. Thermal desorption measurements give an apparent activation energy for CO desorption from diamond 100 of 45 kcalmol

Subject Categories:

  • Inorganic Chemistry
  • Laminates and Composite Materials
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE