Accession Number:

ADA277116

Title:

Epitaxial Liftoff Technology onto Processed Silicon Foundry Wafers

Descriptive Note:

Annual letter rept. for FY1993

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1993-01-01

Pagination or Media Count:

2.0

Abstract:

Technical Objectives Research the application of liftoff transfer of epitaxial material to foreign substrates including surface chemistry, electrical, mechanical, thermal and optical properties of Van der Waals bonded materials III-V devices bonded to silicon circuitry and to other substrates with enhanced optical, electrical or thermal properties integrated optical devices incorporating lifted-off material andor devices with LiNbO sub 3, glass or other substrates. Approach This effort addresses the need for new technologies which can fully utilize the performance advantages of III-V GaAs, InGaAs, InGaAsP, and InP materials for electronic and opto-electronic applications. Specifically, the program is directed at demonstrating the potential of epitaxial liftoff as a technology to enable the realization of monolithic optoelectronic devices with the characteristics of epitaxial material. That is, by transfer of epitaxial material to foreign substrates in a form that permits material processing and device fabrication to proceed as though the epitaxial material were grown directly on the substrate.

Subject Categories:

  • Physical Chemistry
  • Laminates and Composite Materials
  • Crystallography
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE