Accession Number:

ADA277028

Title:

IR Materials Producibility

Descriptive Note:

Quarterly rept. No. 6, Nov 1993-31 Jan 1994

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Report Date:

1994-02-01

Pagination or Media Count:

48.0

Abstract:

In this quarter we have completed an extensive paper on native point defects in Hg0.8Cd0.2Te, and submitted it to Physical Review B. We calculated the binding energy of a mercury vacancy tellurium anti-site defect complex in Hg0.8CdTe and estimated the complex density and its consequences on materials processing. The defect formation energies in CdTe and ZnSe, including gradient corrections to the local density approximation, were calculated, and estimates of the neutral defect concentrations in ZnSe were made. We have continued to develop a method to calculate the defect ionization energies in CdTe, ZnSe, and LiNbO3. Preliminary prediction of the defect densities in x0.17 LWIR Hgl-xZnxTe were made and compared to results in HgCdTe. We continued to develop a method to calculate the temperature dependence of the semiconductor bandgaps. Modifications of our thermodynamical codes for the LiNbO3 problem were made so that the stoichiometry and temperature may be specified and the defect densities determined. Native point defect, Defect density, Photonic material, IRFPA, HgTe, CdTe, ZnSe, HgCdTe, LiNbO3.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE