Accession Number:

ADA277018

Title:

Novel Optoelectronic Devices Based on Combining GaAs and InP on Si

Descriptive Note:

Final rept.

Corporate Author:

GHENT RIJKSUNIVERSITEIT (BELGIUM)

Personal Author(s):

Report Date:

1993-01-01

Pagination or Media Count:

9.0

Abstract:

This work has concentrated on basic technologies for the fabrication of devices which can be used in optical interconnect and optical computing applications. One of the most important issues is the technology for integration of different devices on the same substrate. Three different possibilities were investigated heteroepitaxial growth, epitaxial lift-off and patterned epitaxy. The heteroepitaxial technique and the epitaxial lift-off can be used to integrate optoelectronic and electronic devices on the same substrate resulting in optoelectronic integrated circuits or OEICs. In terms of device performance and material quality, very good results were obtained with the epitaxial lift- off. This was reflected in the realisation of a number of interesting devices and optoelectronic integrated circuits. The heteroepitaxial growth still suffers from the large defect density and although clear improvements were obtained, no good device results could be obtained. As an alternative the bonding by atomic rearrangement was also successfully investigated. The patterned growth technique has a different application field and has important advantages in the fabrication of photonic integrated circuits PIC where two or more optoelectronic devices are integrated and coupled optically e.g. laser and waveguide.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Laminates and Composite Materials
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE