Accession Number:

ADA276848

Title:

Research on High Reliability Refractory Ohmic Contacts for GaAs FETs and MODFETs

Descriptive Note:

Final rept.

Corporate Author:

VIRGINIA UNIV CHARLOTTESVILLE SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s):

Report Date:

1994-02-01

Pagination or Media Count:

39.0

Abstract:

This report consists of reprint articles covering the following subjects High Temperature Characteristics of Amorphous TiWSix nonalloyed ohmic contacts to GaAs All Refractory GaAs FET Using Amorphous TiWSix Source Drain Metallization and Graded-InxGa1-x As Layers High Selectivity Patterned Substrate Epitaxy of InxGax-1AsGaAs or X or 1 by Conventional LPOMVPE Effect of Electrochemical Treatments on the Photoluminescense from porous Silicon A Simplified Model Describing Enhanced Growth Rates During Vapor Phase Selective Epitaxy All Refractory GaAs FET for High Temperature Applications.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Ceramics, Refractories and Glass

Distribution Statement:

APPROVED FOR PUBLIC RELEASE