Accession Number:

ADA276754

Title:

Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy

Descriptive Note:

Annual rept. 1 May-30 Oct 1993

Corporate Author:

BOSTON UNIV MA DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING

Personal Author(s):

Report Date:

1993-11-30

Pagination or Media Count:

52.0

Abstract:

During this funding period the work focused on understanding the origin of defects in GaN grown by the ECR-MBE method and studied their role transport, optical and recombination properties. More specifically from EPR studies we deduced the effective mass of the zincblende structure of GaN to be m 0.15 msub o. Photoluminescence studies indicate that the concentration of defect states at 2.2eV is higher on films grown at higher microwave power. The role of hydrogen in the de-activation of p-type doping was investigated by introducing hydrogen in Mg-doped films after their growth. The doping activity is restored upon annealing the hydrogen. TEM studies of GaN film grown on Silicon was completed and reveal that the majority of defects are stacking faults, microtwins and localized regions having the wurtzite structure. In the device area we investigate the RIE of GaN in various reactive gases. Gallium nitride, Molecular beam epitaxy, Electron cyclotron resonance, Defects, Hydrogen, TEM, EPR, RIE.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE