Accession Number:

ADA276605

Title:

The Surface Chemistry of s-Triazine on Si(100)-2x1

Descriptive Note:

Technical rept.

Corporate Author:

EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1994-01-01

Pagination or Media Count:

29.0

Abstract:

The thermal decomposition of s-triazine ST on Sil00-2xl was studied with HREELS, UPS, XPS and TDS. Two adsorption states for ST on the surface were observed, which yielded desorption peaks at 180 and 235 K, respectively. In the second adsorption state, which is thermally stable up to 420 K, ST is likely to lie flat on the surface as indicated by the virtual absence of the asymmetric ring breathing mode at 145 meV in HREELS and by the relatively lower ST coverage O.3 L at temperatures above 200 K. Annealing a 1.2 L ST dosed sample at 550 K caused the dissociation of ST into HCN. Meanwhile, NH and Si-H bonds were formed. Further annealing the surface at 780 K dissociated the CN-containing species and the NH bond. Above 800 K, a mixture of Si nitride and Si carbide was formed on the surface following the cracking of the CH bond and the desorption of the H species. The photodissociation of ST on Si100-2xl was also examined CN radicals in addition to the HCN species could be identified on the surface after it was exposed to 308-nm excimer laser radiation at 1 00 K.

Subject Categories:

  • Organic Chemistry
  • Physical Chemistry
  • Atomic and Molecular Physics and Spectroscopy
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE