Accession Number:

ADA276512

Title:

RF Vacuum Microelectronics

Descriptive Note:

Quarterly progress rept. no. 9, 1 Oct-31 Dec 1993

Corporate Author:

HONEYWELL TECHNOLOGY CENTER BLOOMINGTON MN

Personal Author(s):

• Arch, D. K.

Report Date:

1994-02-15

Pagination or Media Count:

13.0

Abstract:

We summarize our progress towards developing a thin film edge emitter vacuum transistor capable of 1 GHz modulation. The second fabrication run of vacuum transistors was carried out and is approximately 90 complete. Fabrication is anticipated to be completed in early January 1994. Vacuum microelectronics, Edge emitter, Thin film technology, High frequency devices, Triodes.

Descriptors:

• *THIN FILMS
• *TRANSISTORS
• FREQUENCY
• HIGH FREQUENCY
• VACUUM
• MICROELECTRONICS
• EMITTERS
• TRIODES
• RADIOFREQUENCY
• MODULATION
• FABRICATION
• MACHINING
• EDGES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE