RF Vacuum Microelectronics
Quarterly progress rept. no. 9, 1 Oct-31 Dec 1993
HONEYWELL TECHNOLOGY CENTER BLOOMINGTON MN
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We summarize our progress towards developing a thin film edge emitter vacuum transistor capable of 1 GHz modulation. The second fabrication run of vacuum transistors was carried out and is approximately 90 complete. Fabrication is anticipated to be completed in early January 1994. Vacuum microelectronics, Edge emitter, Thin film technology, High frequency devices, Triodes.
- Electrical and Electronic Equipment