Accession Number:

ADA276465

Title:

Annual Report for Contract N00014-90-J-1267. (Illinois University, Loomis Laboratory of Physics)

Descriptive Note:

Annual rept. 1 Oct 1992-30 Sep 1993

Corporate Author:

ILLINOIS UNIV AT URBANA LOOMIS LAB OF PHYSICS

Personal Author(s):

• Chang, Yia-Chung
• Ren, S-F.
• Gu, Z-Q.

Report Date:

1994-02-14

Pagination or Media Count:

4.0

Abstract:

The objective is to understand the electronic structures of semiconductor surfaces and heterostructures in relation to crystal growth. The approach is to perform first-principle theoretical calculations to determine the structures of surface and interface identify the main spectral features of the reflectance-difference spectra of 001 GaAs with transitions involving Ga-Ga dimers and As-As dimers.

Descriptors:

• *ELECTRONICS
• *GALLIUM ARSENIDES
• *STRUCTURES
• *SURFACE PROPERTIES
• *SEMICONDUCTORS
• *REFLECTANCE
• OPTICAL PROPERTIES
• HYDROGEN
• ZINC
• TRANSITIONS
• SELENIDES
• SPIN STATES
• DIMERS
• CRYSTAL GROWTH
• CADMIUM
• SILICON
• SPECTRA
• SUPERLATTICES
• COMPUTATIONS
• INTERFACES
• QUANTUM WELLS

Subject Categories:

• Physical Chemistry
• Electrical and Electronic Equipment
• Crystallography
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE