Accession Number:

ADA276389

Title:

New Material for High Average Power Infrared Generation: QPM-DB GaAs

Descriptive Note:

Technical rept. 1 Sep 1992-30 Nov 1993

Corporate Author:

STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS

Personal Author(s):

Report Date:

1994-01-13

Pagination or Media Count:

32.0

Abstract:

We are investigating quasi-phase-matched diffusion-bonded QPM-DB gaAs for nonlinear infrared applications. We have fabricated diffusion-bonded stacks of up to nine layers, which we have used to demonstrate quasi-phase- matched second-harmonic generation pumped by 10.6-micrometers CO2 laser output. Preliminary optical damage tests of diffusion-bonded-stacked GaAs indicate a power handling capability in excess of other currently available nonlinear infrared materials. Numerical calculations modeling nonlinear frequency conversion and projectioned device performance are included in this report.

Subject Categories:

  • Lasers and Masers
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE