New Material for High Average Power Infrared Generation: QPM-DB GaAs
Technical rept. 1 Sep 1992-30 Nov 1993
STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS
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We are investigating quasi-phase-matched diffusion-bonded QPM-DB gaAs for nonlinear infrared applications. We have fabricated diffusion-bonded stacks of up to nine layers, which we have used to demonstrate quasi-phase- matched second-harmonic generation pumped by 10.6-micrometers CO2 laser output. Preliminary optical damage tests of diffusion-bonded-stacked GaAs indicate a power handling capability in excess of other currently available nonlinear infrared materials. Numerical calculations modeling nonlinear frequency conversion and projectioned device performance are included in this report.
- Lasers and Masers
- Manufacturing and Industrial Engineering and Control of Production Systems