Accession Number:

ADA276210

Title:

ZnO Single Barrier Varistor for Logic Circuits Protection

Descriptive Note:

Progress rept.

Corporate Author:

INTERNATIONAL TECHNOLOGY SERVICES INC DEVAULT PA

Personal Author(s):

Report Date:

1991-11-08

Pagination or Media Count:

38.0

Abstract:

Development of ZnO Single Barrier Varistor under this SBIR program has shown very promising results. The pure ZnO used as a substrate for forming the single barrier varistor was prepared by pressing pure 99.99 polycrystalline ZnO powder and then sintering at 1550 deg C in air. The as- sintered samples are disk shapes of 2.5 cm diameter and 2 - 4 mm thickness. The density after high temperature sintering is 5.4 - 5.6 gm cc approx. 95 - 99 of theoretical density. Current voltage measurements of the pure as-sintered ZnO disks show very high resistivity at room temperature.

Descriptors:

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE