ZnO Single Barrier Varistor for Logic Circuits Protection
INTERNATIONAL TECHNOLOGY SERVICES INC DEVAULT PA
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Development of ZnO Single Barrier Varistor under this SBIR program has shown very promising results. The pure ZnO used as a substrate for forming the single barrier varistor was prepared by pressing pure 99.99 polycrystalline ZnO powder and then sintering at 1550 deg C in air. The as- sintered samples are disk shapes of 2.5 cm diameter and 2 - 4 mm thickness. The density after high temperature sintering is 5.4 - 5.6 gm cc approx. 95 - 99 of theoretical density. Current voltage measurements of the pure as-sintered ZnO disks show very high resistivity at room temperature.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Fabrication Metallurgy
- Computer Hardware