Accession Number:

ADA276178

Title:

Passivation of III-V Compound Semiconductor Based Devices

Descriptive Note:

Final rept. 1 Oct 1990-30 Sep 1993

Corporate Author:

HAWAII UNIV HONOLULU

Personal Author(s):

Report Date:

1993-11-29

Pagination or Media Count:

15.0

Abstract:

Our results indicate that excellent passivation of SiNxGaAs and SiNxInP interfaces can be achieved using both liquid and gaseous sulfur treatments of the surface. It is important to note that the S-treated surfaces are stable in the presence of an soft ECR plasma and are amenable to the environment of SiNx growth. Annealing appears to be a crucial step in achieving lower defect densities at the SiNxIII-V interfaces. A significant reduction in the interfacial defect density leads to unpinning of the Fermi-level at the interfaces. This permits fabrication of superior metal-semiconductor both Schottky and ohmic junctions and metal-insulator-semiconductor FETs. Furthermore, reduction of defects at the interface also reduces the surface recombination velocity, thus improving the performance of minority carrier based devices. We have demonstrated that such is indeed the case by passivating AlGaAsGaAs based heterojunction bipolar transistors and surface-emitting lasers.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE