Accession Number:
ADA276177
Title:
Indium-Vacancy Complexes in Mercury Cadmium Telluride
Descriptive Note:
Final rept. 14 Mar 1991-30 Sep 1993
Corporate Author:
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF PHYSICS AND ASTRONOMY
Personal Author(s):
Report Date:
1993-09-30
Pagination or Media Count:
10.0
Abstract:
This goals of this research were to study specific defect configurations in Hg0.79 Cd0.21 Te MCT, using perturbed angular correlation PAC measurements, with emphasis on the defect consisting of vacancies trapped at the donor impurity indium secondarily, to study antisite defects and small indium precipitates. The first of these objectives was met with the identification and structural characterization of the In-V Hg complexes. It was determined that this defect does occur under appropriate conditions reported in several publications, and that it consists of an indium impurity on a cation site, joined to a single vacancy at the 110 next site. The mysterious 111 orientation of the electric field gradient EFG observed for donor-vacancy complexes in MCT and other II-VI semiconductor was shown to result from the polarization of Te atoms surrounding the indium donor. The thermodynamics of the mercury vacancy and indium-vacancy complexes were extensively characterized, resulting in good estimates of the migration energy for Hg vacancies and binding energies for vacancy-indium pairs. In-V Hg complexes were seen to interact with H impurities. No evidence of either antisite defects or small metal clusters was seen at doping levels up to 10exp 17Incu cm.
Descriptors:
- *SEMICONDUCTORS
- *VACANCIES(CRYSTAL DEFECTS)
- *INDIUM
- *MERCURY CADMIUM TELLURIDES
- METALS
- CATIONS
- POLARIZATION
- THERMODYNAMICS
- POINT DEFECTS
- GROUP III COMPOUNDS
- GROUP V COMPOUNDS
- DOPING
- GROUP VI COMPOUNDS
- PRECIPITATES
- GROUP II COMPOUNDS
- GRADIENTS
- MIGRATION
- GROUP IV COMPOUNDS
- IMPURITIES
- ENERGY
- ELECTRIC FIELDS
- TRAPPING(CHARGED PARTICLES)
- ATOMS
Subject Categories:
- Inorganic Chemistry
- Physical Chemistry
- Electrical and Electronic Equipment
- Crystallography