Accession Number:



Modification of Semiconductor Surface Properties with Chemically Bound Molecular Films

Descriptive Note:

Final rept. 15 Jun 9190-15 Dec 1993

Corporate Author:


Personal Author(s):

Report Date:


Pagination or Media Count:



In line with these objectives three parallel and connected thrusts were pursued 1 investigation of the use of Langmuir-Blodgett LB films in MIS Schottky structures to modify the barrier properties of junctions made from SiO2Si and GaAs100, 2 the treatment of Si and GaAs100 surfaces with inorganic P and S compounds in order to favorably modify the electrical behavior, primarily via passivation of surface traps, and 3 the development of self-assembled monolayers of organothiols, in particular, alkanethiolates on GaAs100 as a means to modify the electrical properties of the surface and more recently as a new class of ultrahigh resolution lithographic resists for nanofabrication. In support of each of these thrusts extensive work was carried out in two areas characterization of the structure and composition of the surface films, primarily by infrared spectroscopy IRS, x-ray photoelectron spectroscopy XPS and ellipsometry and characterization of the electrical behavior of the film and its interface with the semiconductor, primarily by fabrication of MIS Schottky diode structures and measurement of I-V and C-V response, but also including limited photoluminescence and photoreflectance measurements. All the work was directed ultimately for the chemically bonded molecular film samples. The LB films represented molecules adsorbed with no chemical bonding, the inorganic treatments represented chemically modified surfaces with molecular groups and the chemically bound inorganic films contained both the previous aspects. Semiconductors, Molecular films, Langmuir- Blodgett films, Organothiols, Surface films, Schottky diode structures.

Subject Categories:

  • Inorganic Chemistry
  • Organic Chemistry
  • Physical Chemistry
  • Electrical and Electronic Equipment

Distribution Statement: