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Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems

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Quarterly progress rept., 1 Nov 1993-31 Jan 1994

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During this reporting period 11-01-93 to 01-31-94 we have continued to make significant progress towards the program goals. We have developed a new normal incidence p-type strained-layer InGaAsInAlAs QWIP grown on InP by MBE. This PSL QWIP has achieved an ultra-low dark current and very high detectivity at 8.1 micrometers and 77 K. The detector is under background limited performance BLIP for T100 K, which is the highest BLIP temperature ever reported for a QWIP. A dark current density of 7x10exp -8 Asq cm and BLIP detectivity of 5.9x10to the 10 power Jones were obtained for this QWIP at 77 K. Other tasks performed during this period include i Design, fabrication and characterization of a new two-color stacked BTM and BTC QWIP for 3-5 and 8-12 micrometers IR detection, ii design and fabrication and characterization of a normal incidence p-type compressive strained -layer InGaAsGaAs QWIP grown on GaAs, and iii theoretical and experimental studies of parameter optimization for an InGaAs BTM QWIP. Detailed results and accomplishments are described in this report. GaAsGaAlAs Quantum Well Infrared PhotodetectorsQWIPs, p-Type strained-layer InGaAsGaAs QWIP, Intersubband absorption, Dark current, Responsivity, Detectivity, 2 Color stack QWIP.

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  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors
  • Quantum Theory and Relativity

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