Accession Number:

ADA275648

Title:

Low Voltage Electron Beam Lithography

Descriptive Note:

Rept. for Aug 1993-Jan 1994

Corporate Author:

STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS

Personal Author(s):

Report Date:

1994-01-01

Pagination or Media Count:

45.0

Abstract:

In order to develop a low-energy-spread, high brightness electron source using negative electron affinity technology, it is necessary to survey the effects of cathode structure and activation on energy spread, lateral velocity distribution, peak current, and lifetime. Most research in NEAPC technology has gone into detector applications, to improve photoyield at low light intensity and high wavelength, Intevac is a leader in this area. The scientific understanding and technical expertise developed in this effort are important to achieving our goal of an electron source optimized for low-energy electron applications however, it will be necessary to investigate other cathode properties peak brightness, energy spread under a substantially different operating regime high light intensity, small emission area, high extraction field.

Subject Categories:

  • Acoustics
  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE