Accession Number:

ADA275529

Title:

Tunnelling Hot Electron Transfer Amplifiers

Descriptive Note:

Final rept.

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s):

Report Date:

1993-10-30

Pagination or Media Count:

35.0

Abstract:

Significant advances were achieved in tunneling hot electron amplifiers and in the understanding of hot electron transport in the work funded by the contract and carried out by M. Heiblum and his co-workers. The results of this work are described in detail in nine papers that have been published in the open literature. These papers are listed below as references 1-9 and copies of them are attached. This report summarizes the principal results. There are three aspects of the work in which the results are particularly noteworthy The demonstration of the first hot hole tunneling transistor and its use to study hot hole transport in GaAs The successful fabrication of a hot electron THETA transistor with a pseudomorphic InGaAs base which allowed high transistor gains Beta approx. 30 to be achieved and The conception and successful fabrication of a lateral hot electron device and its use to investigate ballistic, hot electron transport in a 2-dimensional electron gas in GaAs.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE