Accession Number:

ADA275454

Title:

Optoelectronic Integrated Circuits Fabricated Using Atomic Layer Epitaxy

Descriptive Note:

Final rept. 1 Mar 1989-30 Sep 1992

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING AND MATERIALS SCIENCE

Personal Author(s):

Report Date:

1993-12-01

Pagination or Media Count:

214.0

Abstract:

The interest in monolithic integration of optoelectronic devices based on III-V semiconductors has presented a great challenge to crystal growth and device processing. Laser assisted atomic layer epitaxy LALE is attracting increased attention as a candidate to meet the challenge because it offers localized deposition at a control of layer thickness, doping profile, and interface roughness on an atomic scale This work starts with a detailed study of the gas phase thermal decomposition of trimethylgallium TMGa and its relevance to atomic layer epitaxy ALE using molecular beam sampling mass spectrometry. The growth of GaAs by LALE is then first studied using triethylgallium TMGa and arsine AsH3 as precursors. The influence of growth chemistry on the carbon contamination in the epilayers is further studied by using combinations of TMGa and tertiarybutylarsine TBAs and triethylgallium TEGa and AsH3. The device application of the growth technique is demonstrated for the first time through laser diodes with the GaAs QW grown by LALE Laser Assisted Atomic Layer EpitaxyLALE

Subject Categories:

  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices
  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE