Accession Number:

ADA275235

Title:

Modeling the Total Dose Radiation Effects of Hg(1-x)Cd(x)Te Photodiodes Using Numerical Device Simulators

Descriptive Note:

Technical rept. 1 Oct 92-28 Feb 93,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY NY

Report Date:

1994-01-01

Pagination or Media Count:

59.0

Abstract:

We fabricated high quality MCT diodes using in-situ grown MCT and selective annealing. We used these diodes to benchmark our initial characterization and as a basis for our irradiation modeling. We implemented the models in PISCES-IIB and compared the I-V relationship to measurements. The close match between simulations and measurements demonstrates the applicability of the models. We expanded the simulations to I-V characteristics of irradiated diodes. To do so, we developed models for the induced current mechanisms resulting from radiation interactions. The results confirm the theories concerning the radiations effect on tunneling in MCT. The simulations also suggest that improvements require knowledge of tunneling currents associated with trap formation in MCT. Radiation effects, MCT, Mercury cadmium telluride, Infrared detectors, Device simulations, Photodiodes.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE