Accession Number:

ADA275079

Title:

InTISb for Long-Wavelength Infrared Photodetectors and Arrays

Descriptive Note:

Annual rept.

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

1993-01-01

Pagination or Media Count:

23.0

Abstract:

The objective of this research program is grow InTISb alloys by low- pressure metalorganic chemical vapor deposition and to investigate their physical properties, in order to demonstrate the feasibility of long-wavelength infrared detectors based on these materials. Ab theoretical calculations indicate that InTISb is a potential alternative to HgCdTe, with the added metallurgical and processing advantages offered by III-V technology. TISb has predicted to be a semimetal with a bandgap of -1.5e V. Therefore, it should be possible to cover the whole infrared spectrum by allowing InSb with TISb. In addition, TISb is expected to remain lattice-matched to InSb within 2, which is an advantage for the growth of device-quality InTISb alloys. Even though TISb was expected to favor the Cs-CI-type structure, InTISb alloy was estimated to exhibit a stable zinc-blende structure up to 15-20 TI.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Optical Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE